Cree’s Wolfspeed Launches Next Generation GaN HEMTs with Unmatched Efficiency

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.

(Image: Wolfspeed)

The new 28V GaN HEMT devices are developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs. Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.

“By moving to our proven 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” said Jim Milligan, RF and microwave director, Wolfspeed. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes these devices ideal for an extensive range of RF power amplifier applications, including those for military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.

(Image: Wolfspeed)

The CG2H400 Series include these packaged 28V unmatched GaN HEMT devices:

  • CG2H40010 – 10W, 8GHz operation with 70% efficiency (at PSAT) and 18dB/16dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
  • CG2H40025 – 25W, 6GHz operation with 65% efficiency (at PSAT) and 17dB/15dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
  • CG2H40045 – 45W, 4GHz operation with 60% efficiency (at PSAT) and 18dB/14dB small signal gain (at 2.0GHz and 4.0GHz, respectively)

The CG2H400 Series devices are available in screw-down flanged or solder-down pill packages.

(Image: Wolfspeed)

The CG2H800 Series include these bare die 28V unmatched GaN HEMT devices:

  • CG2H80015 – 15W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
  • CG2H80030 – 30W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
  • CG2H80060 – 60W, 8GHz operation with 65% efficiency (at PSAT) and 15dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)

Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. Wolfspeed™ GaN-on-SiC RF devices enable next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.

Attendees of European Microwave 2017 can learn more about these devices as well as the rest of Wolfspeed’s GaN RF portfolio by visiting them at booth #195. For more information about Wolfspeed’s RF products and foundry services, please visit

Disclaimers of Warranties
1. The website does not warrant the following:
1.1 The services from the website meets your requirement;
1.2 The accuracy, completeness, or timeliness of the service;
1.3 The accuracy, reliability of conclusions drawn from using the service;
1.4 The accuracy, completeness, or timeliness, or security of any information that you download from the website
2. The services provided by the website is intended for your reference only. The website shall be not be responsible for investment decisions, damages, or other losses resulting from use of the website or the information contained therein<
Proprietary Rights
You may not reproduce, modify, create derivative works from, display, perform, publish, distribute, disseminate, broadcast or circulate to any third party, any materials contained on the services without the express prior written consent of the website or its legal owner.

Tokushima, Japan – 17 June 2022: Nichia, the world’s largest LED manufacturer and inventor of high-brightness blue and white LEDs, announces the addition of the Direct Mountable Chip Series (Part Number: NVSWE21A-V1) to the portfol... READ MORE

DURHAM, N.C.--(BUSINESS WIRE)--Cree LED, an SGH company (Nasdaq: SGH), announced today the launch of XLamp® Element G LEDs, delivering a new product class with unmatched light output and efficiency for LEDs of this size. The... READ MORE