New 500 Watt GaN on SiC Transistor Available Now

Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, has expanded its family of radio frequency (RF) transistors based on gallium nitride (GaN) on silicon carbide (SiC) technologies with a new S-band 500 watt (W) RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar (ASR) applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.


The 2729GN-500 transistor delivers unparalleled performance of 500W of peak power with 12 decibel (dB) of power gain and 53 percent drain efficiency over the band 2.7 to 2.9 gigahertz (GHz) to provide the maximum power in a single device covering this band. Key product features include:

Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:

Packaging and Availability:
The 2729GN-500 is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Loaner demonstration units are available to qualified customers and technical datasheets are available on the Microsemi website at www.microsemi.com.