One critical issue of Micro LEDs is that their luminous efficiency decrease as their dimension shrink, leading to increasing problems in inspection and repair. Technology developers thus try to improve Micro LED efficiency at the phase of epitaxy wafer production. A group of researchers from UCSB, including Nobel winner Shuji Nakamura, recently published a paper describing the method of fabricating high performance InGaN Micro LED with epitaxial tunnel junctions (TJs Micro LEDs). Published in Optics Express, the paper, titled “Size-independent Low...