A research team led by Shengjun Zhou at Wuhan University has reported developing efficient GaN-based green LEDs on sapphire substrate. They proposed a hybrid nucleation layer consisting of sputtered AlN and mid-temperature GaN components to boost quantum efficiency of GaN-based green LEDs. The team says the hybrid nucleation layer provides a promising approach for the pursuit of efficient III-nitride emitters in the green-to-amber region. Currently, the development of efficient III-nitride emitters in the full visible range is very attractive. The integrati...