Researchers based in Korea report on size-dependent characteristics of indium gallium nitride (InGaN) red micro-scale light-emitting diodes (micro-LEDs) fabricated on 4-inch silicon (Si) substrates [Juhyuk Park et al, Optics Express, v32, p24242, 2024]. The team from Korea Advanced Institute of Science and Technology (KAIST), Korea Advanced Nano Fab Center (KANC), and Chungbuk National University, sees its work as being pioneering, adding: “This work is the first investigation into the size-dependent characteristics of InGaN/GaN red micro-L...