EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications

EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). 
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Plessey, Anvil Semiconductors and University of Cambridge Aim to Overcome the Green Gap with GaN on 3C-SiC/Si LEDs

The collaboration, which is partly funded by Innovate UK under the £14m Energy Catalyst Programme, follows on from work by Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge where they successfully grew cubic GaN on 3C-SiC on silicon wafers by MOCVD. The underlying 3C-SiC layers were produced by Anvil using its patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers.  
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Plessey Integrates Optics into GaN-on-Silicon CSP LEDs

Plessey announced that it has developed a patented technology for Chip Scale Optics (CSO) based on its award winning GaN-on-Silicon MaGIC ™ LEDs.  Chip Scale Optics permits design of light emission angles down to ten degrees direct from the LED.  Having the primary optics on-chip eliminates the cost of primary optics typically found in packaged LEDs and chip-on-board modules.  Furthermore, it significantly lowers the cost and provides for far greater design freedom for secondary optics within a luminaire.  The first off applications include retail spot lighting, hospitality lighting, high and low bays, street lighting and stadium lighting.  It is estimated that Plessey’s chip scale optics will halve the cost of these lighting applications.
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Toshiba to Expand Range of GaN-on-Si High Power White LEDs

Toshiba Electronics Europe has added four new products to its TL1L4 series of white LEDs. These new additions provide a high luminous flux and are suited to applications ranging from street and stadium lighting to LED light bulbs and down lighting for use in the home.
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Plessey Wins UK AMSCI Grant for 8-inch GaN-on-Si Production

Plessey Semiconductors announced today that it will be leading a GBP1.3 million government funded project in conjunction with AIXTRON and Bruker Nano Surfaces Division. This project will accelerate high volume manufacturing of Plessey’s innovative LEDs created with GaN-on-Silicon technology at its Devon based manufacturing site.
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Exagan Raises EUR 5.7 M to Produce GaN-on-Silicon Power-switching Devices on 200mm Wafers

Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology that enables smaller and more efficient electrical converters,announced it has raised €5.7 million (US $6.38 million) in first-round financing that will be used to produce high-speed power switching devices on 200mm wafers.
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Plessey Featured as One of the best British Manufacturers in 21st Century on New Website

Plessey Semiconductors announced it will be featured in a new website showcasing 21st century British manufacturing which will be launched 23rd April at a high-profile event in London.
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Manufacturers Remain Divided About LED Substrate Technology

Leading LED chip industry experts had very different perspectives on GaN LED substrates at 2015 LED Executive Summit hosted by SEMI at TILS 2015 in TWTC Nangang Exhibition Hall, Taipei, Taiwan recently.
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SFCE Secures Ownership Stake in Lattice Power

Shunfeng International Clean Energy Limited (SFCE) announced that it has signed an MOU with Lattice Power to acquire a 51% ownership stake in the company. SFCE's successful bid in Lattice Power is a milestone for the listed company as it transitions to become a global low carbon solutions provider. Lattice Power's gallium nitride (GaN) on silicon technology is exclusively patented worldwide, offering significant cost advantages compared to sapphire substrate technology LED. The partnership expands SFCE's portfolio and increases the profitability of the listed company.
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Infineon Unveils Portfolio of Energy-Efficient Enhancement Mode and Cascode configuration GaN-on-Silicon Platforms at APEC 2015

Infineon Technologies announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimized for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in server, telecom, mobile power and consumer goods such as Class D Audio systems. GaN technology significantly reduces the size and weight of power supplies which will open up new opportunities in end-products such as ultra-thin LED TVs.
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Epistar Acquires ALLOS’ GaN-on-Si Epiwafer Technology License

Leading Taiwanese LED maker Epistar announced recently that the company had acquired German manufacturer ALLOS unique GaN-on-Si technology. ALLOS has licensed the related patent to Epistar, and the two companies have concluded the initial phase of its technology transfer project. For further information please see original press release below.
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Epistar Acquires Key Technologies from TSMC SSL to Fend off Japanese Rival

The main objective of Epistar’s acquisition of TSMC SSL is to obtain key LED substrate technology to prevent Japanese manufacturer Toshiba from taking the lead in GaN-on-Si technology, according to a Chinese-language Wealth Magazine report.
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LatticePower Commercializes GaN-on-Si LED Luminaires

LatticePower, will display at LIGHTFAIR International 2014 (booth #1933B) the next generation of light fixtures demonstrating the true convergence of performance, design and affordability. The company's new proprietary GaN-on-Silicon LED track, highbay and flood fixtures deliver outstanding efficacy, superior brightness and excellent color rendering. 
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China’s LED Chip Industry Trends

LED chips are a core component in the LED industry. There are currently many domestic and international LED chip manufacturers in China, but there currently are no categorization standards, according to a report by Chinese-language LEDtimes.cc. Comparison of chip technologies show foreign companies are more innovative, while Chinese manufacturers are still focused on production volume.
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Toshiba Launches 1W and 0.6W White LEDs for LED Lighting

Toshiba Corporation announced the launch of two new series of white LEDs, the 3.5 x 3.5mm lens package 1W type “TL1L2 series,” and the 3.0 x 3.0mm flat package 0.6W type “TL3GB series”. Mass production of both will start from the end of March.
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Toshiba Launches Next Generation GaN-on-Si White LEDs

Toshiba Electronics Europe (TEE) has announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on cilicon (GaN-on-Si) process. The 1W TL1F2 LEDs offer a cost-competitive alternative to current LED packages, allowing manufacturers of general purpose and industrial LED lighting to drive down costs.
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Transphorm Scales up to 200 mm Wafers with AIXTRON’s G5+ GaN-on-Si system

AIXTRON SE announced that US company Transphorm Inc. is stepping up production of gallium nitride on silicon (GaN-on-Si) with its latest order of AIXTRON’s G5+ MOCVD system, capable of handling five 200 mm (5x8-inch) wafers. The order was made in the fourth quarter of 2012 with delivery due in the second quarter of 2013. Primit Parikh, President of Transphorm comments: “We are not just increasing our capacity with this order. This new system also expands our capability from 150 mm to 200 mm diameter wafers, providing economies of scale. We ...
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AIXTRON Receives CS Manufacturing Award 2013 for its AIX G5+ GaN-on-Si Technology

AIXTRON SE has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si). The Award recognizes key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward. Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4, 2013 to AIXTRON’s Vice President Europe Dr. Frank Schulte. &...
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AZZURRO Launches 150 mm GaN-on-Si LEDs Templates

The easy migration of LED manufacturing to GaN-on-Si is described in a White Paper released by AZZURRO. Utilizing the company’s 150 mm templates the advantages of GaN-on-Si can be gained after very short design-in times. The White Paper outlines technical hurdles to be overcome when migrating to GaN-on-Si, covers key achievements possible when using the right technology, details the advantages for the move to GaN-on-Si obtainable with templates and shows development solutions to the LED epitaxy engineer. In detail data of GaN-on-Si products is rev...
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National Central University Taiwan Develops GaN-on-Si Power Devices with AIXTRON Reactor

AIXTRON SE today announced a new MOCVD system order from National Central University (NCU) in Taiwan. Existing customer, NCU has placed an order for one 1x6-inch AIXTRON Close Coupled Showerhead MOCVD system, which will be dedicated to the growth of GaN epitaxial structures on 6-inch silicon substrates, for use in the research and development of power management devices. AIXTRON’s local support team has installed and commissioned the new reactor in the state-of-the-art cleanroom facility at NCU’s Microwave and Optoelectroni...
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Lumileds introduced the LUXEON CZ Color Line, a product line optimized to deliver maximum punch. “The LUXEON CZ features up to 48% higher punch than any other undomed color LED,” said Jennifer Holland, Product Line Direct... READ MORE

LG Innotek today announced that it has supplied UV LED module for water purifiers to the famous Japanese purifier manufacturer for the past year and achieved the perfect quality of zero defect rate.