Canadian firm Meaglow has made a breakthrough on a low temperature Migration Enhanced Afterglow film growth technique to produce a thick InGaN layer with strong yellow emission, for increasing the efficiency and lowering production costs of green LEDs and laser diodes. It is looking for collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications and other uses. Meaglow's Chief Scientist K. Scott Butcher, says, "It's the brightest p-n junction I've ever seen in my life,...