GaN nanoelectronics transistor-LEDinside

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2015-08-24

Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-transistor Blocking Voltage

Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas.

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