A research team led by a professor from Department of Optics and Photonics at Taiwan’s National Central University revealed a new production method for Micro LED epitaxy wafer. The team developed GaN thin film wafer under low temperature via an approach of high-energy physic. According to the researchers, the method would cost only one tenth of the current Micro LED production cost and could be applied for mass production. (Image:NCU) By combining data analysis and semiconductor manufacture process, the researchers aim to find innovative approaches for M...