2012-09-05

Cree Offers 4H Silicon Carbide Epitaxial Wafers Featuring Very Low Basal Plane Dislocation

Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers.  This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs capable of causing Vf drift as low as < 0.1 cm-2.   This low BPD material further demonstrates Cree’s long-standing commitment to continuous improvement and investment in SiC materials technology. “Bipolar devices in SiC have long been held back by forward voltage degradation caused by the pres...
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2012-08-31

Cree Debuts 150-mm 4HN Silicon Carbide Epitaxial Wafers

Cree announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers. Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication ...
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Tokushima, Japan - 6 March 2024: Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, has started mass production of the new UV-B (308nm) and UV-A (330nm) LEDs in its popular 434 Series packa... READ MORE

New XLamp® S Line LEDs enhance growth, last longer, lower energy costs Horticulture and other forms of agricultural lighting require application-tuned ratios of spectral content, high efficacy and long lifetimes. Whether you are interested... READ MORE