SSL China 2016: Wide Bandgap semiconductors (WBGs) Boosts High Pressure and High Speed Market Demand

The 13th China International Forum on Solid State Lighting (SSLCHINA 2016) and 3th International Forum on Wide Bandgap Semiconductors China(IFWS)were held in Beijing International Convention Center from November 15 to 18, 2016. The forums and conferences realized China’s 13th Five- Year Plan by providing strategic highlights of electronic material projects. LEDinside has summarized talks of professionals and experts in each area, including Micro LED, Laser lighting, VCSEL, Li-Fi Communication, smart lighitng and well-being lighting.
 
Thanks to subsidies of semiconductor from China’s government and demand of high current, high voltage and high speed components, including cell sites, high speed railway and charging stations of electric vehicles, GaN and SiC based power devices are one of the highlighted markets over the past few years. In response to market demand, Aixtron and Veeco consecutively introduce single wafer reactors for power based devices, providing better yield rate and production capacity that reduce costs while enhancing consistency of wafers.
 
[GaN power based devices]
 
Compared to Si MOSFET or Si IGBT, GaN power based devices have superior power density, better energy efficiency, higher reliability, high speed that are ideal for rapid switch on/off, heat dissipation and PCB layout. These power based devices enable small-size product design, such as AC-DC power supply applications for consumers’ products and data centers.
 
 
 
 
 
Aside from meeting market demand of package and module design, GaN power based devices are required to meet mass production in the future. The main demand in GaN power based devices from 2016 to 2017 mainly include consumers’ products, Data Centers, industrial applications, PV inverters and automotive applications.
 
 
[SiC based power devices]
While GaN based power devices allow high voltage at 900V, products with SiC based power devices enable even higher voltage market. Currently, international manufacturers provide products that withstand more than 1200V that can be used in markets of higher speed, higher voltage and temperature. Applications of such include high speed railway, cell sites, and automatic factory.
 
SiC MOSFET have lower conduction loss and lower switching loss. In consideration of power devices, lowering stray inductance and capacitor are crucial other than reliability. Meanwhile, gate drive circuit includes protection circuits.
 
The introduction of more suitable packages indicate the applicability of products. With cloud surveillance system, the working lifetime and reliability will be improved at the same time. As U.S. and Japanese manufacturers tapped into SiC based power devices earlier and have witnessed striking growth in development, Korean manufacturers also establish comprehensive supply chain. It’s expected that the market to see rapid development.
 
 

Author: Joanne Wu, LEDinside

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