CEA-Leti announced at Photonics West 2020 its new development of a silicon nitride (Si3N4) 200mm platform for developing photonics in UV through mid-infrared wavelengths. Available in CEA-Leti's SiN platform in a multi-project-wafer program, the breakthrough targets designers in integrated quantum optics, LiDAR, biosensing, and imaging whose projects require ultralow propagation losses and high-power handling capability. (Image: CEA-Leti) According to CEA-Leti, this ultralow-loss SiN layer is available for multi-level photonic circuits. It can be c...